Development of Phosphorus-Doped Nanoscale Poly-Si Passivating Contacts via Inkjet Printing for Application in Silicon Solar Cells

Herein, high-quality localized phosphorus-doped polycrystal-line silicon (poly-Si) passivating contacts containing nanoscale poly-Si film (similar to 100 nm) on an ultrathin SiOx layer (similar to 1.5 nm) were fabricated via an inkjet printing technique. A detailed study of the impacts of inkjet printer settings, dopant concentration, and annealing temperature on the poly-Si passivating contact performance (represented by implied open-circuit voltage iVoc and contact resistivity rho c) was carried out. By applying optimized process conditions on symmetrical industrially processed intrinsic poly-Si/SiOx/n-type crystalline Si (c-Si) substrates, good surface passivation was achieved with an iVoc of 699 mV, together with a low rho c of 6.4 m omega center dot cm2, after annealing at 975 degrees C. After a hydrogenation treatment via the deposition of aluminum oxide (AlOx)/silicon nitride (SiNy) stack and subsequent forming gas annealing (FGA), the optimum annealing temperature shifted to 950 degrees C and the iVoc was further improved to an excellent value of 729 mV. Optical images reveal that a line width of 75 mu m can be realized on a mechanically polished silicon wafer. Moreover, high-resolution micro-photoluminescence (mu-PL) maps clearly demonstrate the localization of the doped regions on the symmetrical substrate after annealing. These results show that inkjet printing is a promising technique for the fabrication of localized poly-Si/SiOx passivating contacts in high-efficiency solar cells with high flexibility and simplicity.