Effects of Ti-doping on energy storage properties and cycling stability of Pb0.92La0.05ZrO3 antiferroelectric thin films

Pb0.925La0.05Zr1-xTixO3 (PLZT, x = 0.5%similar to 5.5%) thin film were fabricated on Pt(111)/TiO2/SiO2/Si substrates by sol-gel method. In the Zr-rich region, the saturation polarization strengthens with increasing Ti content due to the change of ion-radius. On the other hand, the switching field decreases, which means the enhancement of ferroelectricity. The phase structure and polarization of the films can be tuned by a small amount of Ti doping, and then the energy storage characteristics of the thin films can be modulated. The results showed that a large energy storage density (W-rec) of 49.7 J/cm(3) and efficiency (eta) of 54% were achieved in the x = 1.5%. Moreover, the x = 1.5% sample displayed excellent cycling stability up to 1 x 10(6) cyclings, which demonstrated that La and Ti co-doped films can be considered as potential candidates for future energy storage devices.