A Subthreshold Layout Strategy for Faster and Lower Energy Complex Digital Circuits

This work presents complex circuitry from subthreshold standard cell libraries created by geometric STI spacer patterning for bulk planar CMOS technology nodes. Performance/leakage granularity enhancement affords safer multi-Vt synthesis in aggressive voltage scaling schemes. Libraries are evaluated in silicon through implementation of 32-bit datapath 128-bit AES cores. Intra-die nominal temperature (20 degrees C) analysis reveals improvements of up to 8.65x/24% MEP-to-MEP in frequency and energy-per-cycle respectively, compared to a state-of-the-art subthreshold library. A negative temperature correlation with performance enhancement is demonstrated extending beyond the cell level and into more complex designs. MEP-to-MEP performance enhancement and energy-per-cycle reduction are demonstrated over a temperature range of 0 degrees C to 85 degrees C.