Si Incorporation into AsSeGe Chalcogenides for High Thermal Stability, High Endurance and Extremely Low Vth Drift 3D Stackable Cross-Point Memory

By incorporating Si into AsSeGe system, we demonstrate a 3D stackable OTS+PCM memory in a 1k by 1k cross-point memory array with extremely low V _tS drift (~0V after 3 days from programming), wide V _tS /V _tR window (>2V main distribution memory window), high endurance (>2E11 cycles), excellent I _OFF and thermal stability. So far, attempts to improve the thermal stability of AsSeGe system sacrifice I _OFF and cycling endurance. We show that Si incorporation relaxes this trade-off and can greatly improve the thermal stability and cycling endurance while also achieving good I _OFF . In particular the I _OFF of AsSeGeSi selector is improved over the AsSeGe system for films of 20 nm.