A High-Output Power 1-V Charge Pump and Power Switch for Configurable, In-Field-Programmable Metal eFuse on Intel 4 Logic Technology

A flexible, low-cost design solution for in-field-programmable (IFP) metal eFuse is reported. The design maximizes fuse yield through a tunable program voltage provided by a two-stage charge pump (CP), placed in closed loop (CL) with a low dropout regulator (LDO). The integration of CP and LDO solves electrical over-stress (EOS) concerns and achieves stability and low voltage operation through several design innovations. The CP integrates with the fuse macro by distributed, extra-high voltage (EHV) power-gate power-switch (PGPS), which switches between CP and nominal supply for fuse read, increases array efficiency, and reduces leakage. The solution does not require a specific power sequence or metal–insulator–metal cap, enabling maximum design adaptability and integration flexibility. This design is implemented and characterized on Intel 4 technology, where >99.9% successful fuse bit program was measured across [−40 °C, 125 °C] temperature, and down to 0.95 V.