Improvement of Leakage Current in Double Pocket FDSOI 22 nm Transistor Using Gate Metal Arrangement

This research work shows numerical analysis of double pocket FDSOI MOSFET. The proposed device outperformed at nanoscopic scale and influence of work function on threshold voltage and leakage current have been analyzed thoroughly. Different gate metals are arranged in such a way that it forms stack of three metal layers as gate electrode. This work has been progressed by staking of titanium nitride, silver, and cobalt in 22 nm transistor. TiN/Ag/Co, Ag/Co/TiN, and Co/Ag/TiN are three metal gate arrangement which has been simulated to get improved results in terms of threshold voltage and low leakages. In the proposed device, two identical p-type pockets have been introduced in source and drain side of same doping concentration that increase effective channel length to decrease the depletion width (dB) and effects of electric field at junction has been minimized. All simulation work has been performed by using ATLAS TCAD.