Self-heating in a diamond Schottky diode influenced by U-shaped resistivity

In power electronics, the temperature of the device and its control are of major importance. Most of today's materials are particularly sensitive to this increase in temperature and performance is known to deteriorate. Moreover, if heat dissipation is poorly controlled, the component can enter into a self-heating regime which leads to its destruction. Diamond, however, has quite different performance levels because an increase to its tem-perature allows its resistivity to be reduced by the thermal activation of the carriers. It is therefore particularly important to control this temperature rise for an optimal use of diamond in a power device. The importance of self-heating in the use of these components will be shown through real-time coupled measurement of current, voltage, and temperature of a Schottky diode. An explanation of the characteristics will be given with a coupling of the thermal and electrical equations. Thus, although delicate to master, clever use of this electrothermal coupling makes it possible to envisage optimal or even original uses of these diamond devices.