Charge collection efficiency study on neutron-irradiated planar silicon carbide diodes via UV-TCT

The material properties of silicon-carbide (SiC) make it a promising candidate for application as a particle detector at high beam rates. In comparison to silicon (Si), the increase in charge carrier saturation velocity and breakdown voltage allows for high intrinsic time resolution while mitigating pile-ups. A larger bandgap and higher atomic displacement threshold energy suppresses dark current and potentially improves radiation hardness, respectively. In addition to the lower susceptibility to temperature variations, it allows the operation of irradiated devices at room temperature and daylight illumination. Although already known for several decades, recent developments in industrial power electronics made SiC more accessible as a potential particle detector. Repeatability, large amplitudes and timing possibilities of signal pulses produced by the ultraviolet transient current technique (UV-TCT) allow for precise performance comparison of differing samples, while efficiently monitoring the influence of alternating external conditions. We present measurement results on the performance of neutron irradiated 4HSiC p-on-n planar diodes using such a setup. Dark current levels remain in the nA range for all fluences (5×1014neq/cm2−1×1016neq/cm2), while charge collection efficiency decreases with irradiation fluence, partially compensated when operating samples at reverse voltage conditions far above full depletion.