Deposition of PtPd nanoparticles on the silicon surface by galvanic replacement in DMSO medium

The co-deposition of Pt and Pd on the silicon surface via galvanic replacement (GR) method from H 2 [PtCl 6 ] and Pd(NO 3 ) 2 solutions in DMSO has been studied. It is shown that spherical nanoparticles of PtPd and nanofilms based on them are formed on the Si surface from solutions of 4 mM H 2 [PtCl 6 ] + (1, 2, 4) mM Pd(NO 3 ) 2 + 50 mM Bu 4 NClO 4 . The priority deposition of Pt with its predominant content in the deposited binary system was established. It is shown that the main factor influencing the content of components in it is the concentration of precursors in the solution of co-depositable metals—H 2 [PtCl 6 ] and Pd(NO 3 ) 2 . The main factors influencing the size of PtPdNPs and the morphology of the SiPtPd surface are the ratio of [H 2 PtCl 6 ]:[Pd(NO 3 ) 2 ] concentrations, temperature and duration of the GR process. With an increase in temperature, the average size of nanoparticles increases from ~ 50 to ~ 200 nm. An increase in the concentration ratio of [H 2 PtCl 6 ]:[Pd(NO 3 ) 2 ] and temperature and the deposition duration contribute to the rise in the size of PtPdNPs.