A low-power high-quality CMOS image sensor using 1.5 V 4T pinned photodiode and dual-CDS column-parallel single-slope ADC

JOURNAL OF SEMICONDUCTORS(2022)

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摘要
This paper presents a low-power high-quality CMOS image sensor (CIS) using 1.5 V 4T pinned photodiode (4T-PPD) and dual correlated double sampling (dual-CDS) column-parallel single-slope ADC. A five-finger shaped pixel layer is proposed to solve image lag caused by low-voltage 4T-PPD. Dual-CDS is used to reduce random noise and the nonuniformity between columns. Dual-mode counting method is proposed to improve circuit robustness. A prototype sensor was fabricated using a 0.11 mu m CMOS process. Measurement results show that the lag of the five-finger shaped pixel is reduced by 80% compared with the conventional rectangular pixel, the chip power consumption is only 36 mW, the dynamic range is 67.3 dB, the random noise is only 1.55 e-(rms), and the figure-of-merit is only 1.98 e-.nJ, thus realizing low-power and high-quality imaging.
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关键词
CMOS image sensor, 4T pinned photodiode, single-slope ADC, correlated double sample, counting method
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