Electromagnetic Interference Effects of Continuous Waves on Memristors: A Simulation Study

As two-terminal passive fundamental circuit elements with memory characteristics, memristors are promising devices for applications such as neuromorphic systems, in-memory computing, and tunable RF/microwave circuits. The increasingly complex electromagnetic interference (EMI) environment threatens the reliability of memristor systems. However, various EMI signals' effects on memristors are still unclear. This paper selects continuous waves (CWs) as EMI signals. It provides a deeper insight into the interference effect of CWs on the memristor driven by a sinusoidal excitation voltage, as well as a method for investigating the EMI effect of memristors. The optimal memristor model is obtained by the exhaustive traversing of the possible model parameters, and the interference effect of CWs on memristors is quantified based on this model and the proposed evaluation metrics. Simulation results indicate that CW interference may affect the switching time, dynamic range, nonlinearity, symmetry, time to the boundary, and variation of memristance. The specific interference effect depends on the operating mode of the memristor, the amplitude, and the frequency of the CW. This research provides a foundation for evaluating EMI effects and designing electromagnetic protection for memristive neuromorphic systems.