Coexisting ferromagnetic component and negative magnetoresistance at low temperature in single crystals of the VdW material GaGeTe
Journal of Solid State Chemistry(2022)
摘要
We report magnetoresistance and magnetization studies of single-crystal GaGeTe, which has been proposed as a Van der Waals material. Semi-metallic character is observed in the temperature (T) variation of resistivity (ρ), following ρ(T) ∝ T2 at low temperature with a slope compatible with the usual spin-fluctuating system. Magnetoresistance (MR) at 2 K is negative and strongly dependent on the direction of the magnetic field (H) with respect to the crystallographic c-axis. MR changes sign with increasing temperature above ∼ 100 K, when H is applied along the c-axis. Hall measurements indicate the p-type conductivity with a considerable hole concentration of ∼ 8.7 × 1019 cm−3. Angle-resolved photoemission spectroscopy reproduces the reported results and confirms a peculiar dispersion shape of the hole-like band at the bulk high-symmetry T point near the Fermi energy indicating band inversion. Magnetic hysteresis measurement at 2 K shows diamagnetic behaviour at high-H, whereas a ferromagnetic (FM)-like magnetic hysteresis loop is observed at low-H in between ± 4 kOe. The FM component disappears close to 3 K. Signature of spin-fluctuation in ρ(T), negative MR, and low-T FM component without 3d or 4f impurities in GaGeTe is attractive for the fundamental interest.
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关键词
Van der Waals materials,Photoemission spectroscopy,Magnetization,Magnetoresistance
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