In Situ Diagnosis of Multichip IGBT Module Wire Bonding Faults Based on Collector Voltage Undershoot

Condition monitoring of insulated gate bipolar transistor (IGBT) modules is an effective way to improve the transient performance and reliability of modular multilevel converters (MMC). This article proposes a novel bond wire failure monitoring method for the multichip IGBT modules in the MMC half-bridge submodule (SM) structure. The collector voltage undershoot V _CA(np) of the complementary IGBT switch is measured during the turn- off switching transition of the controlled IGBT switch. V _CA(np) is sensitive to the induced voltage over the stray inductance of the IGBT bond wires and provides high sensitivity as a health indicator. The non-intrusive measurement technique is demonstrated using a half-bridge circuit during the turn- off transition of the controlled IGBT, while its complementary switch (i.e., the device under test) is in the off state. Theoretical analysis and experimental results show that the parametric drift due to wire bonding failures can be effectively monitored with high specific relative sensitivity and granularity. To ensure its effectiveness in practical applications, the influence of load current, SM capacitor voltage, and junction temperature is discussed. In addition, a readout circuit is designed featuring the integrated desaturation detection and voltage peak detection, which offers both the short-term overcurrent fault protection and long-term bond wire aging monitoring functions.