Experimental Study on the Spatial Performance of Photorefractive X-ray Semiconductor Ultrafast Response Chip

The traditional ultrafast electric vacuum devices are usually based on the mechanism of photoelectric conversion, and their performance is restricted by factors such as material response and space-charge effect. It is difficult for the devices like microchannel plate framing cameras, Dilation X-ray Imager (DIXI) , streak cameras to achieve high temporal resolution (100 fs similar to 1 ps) and spatial resolution (similar to mu m) two-dimensional imaging. Ultrafast imaging technology based on photorefractive effect is a new ultrafast diagnostic technology, which has the advantages of high spatiotemporal resolution, all-optical, all and anti radiation. The nonequilibrium carrier lifetime of low temperature grown AlGaAs (LT-AlGaAs) can reach ps-level. The Ultrafast Response Chip (URC) made of LT-AlGaAs has the characteristics of high temporal resolution, meanwhile, good spatial performance is the other key factor for its application. In this paper, the spatial performance of LT-AlGaAs URC is experimentally studied using X-ray, generated by high-energy nanosecond pulsed laser-produced plasma, as the signal. The results show that the URC has the ability of high spatial resolution and large-scale imaging in the X-ray energy dynamic range of 120: 1. The optimal spatial resolution is >= 35 1p/mm (R) MTF = 0.1, and the imaging frame can reach 6.7 mm x 6.7 mm. The results further verify the feasibility of ultrafast diagnostic technology based on photorefractive materials. In the future, LT-AIGaAs URC will be combined with ultrafast framing technologies such as dispersion framing and polarization chirp framing to realize multi-frames and high spatiotemporal resolution two-dimensional imaging.