THz photon-assisted tunneling in hBN encapsulated graphene quantum dot

2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC)(2021)

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摘要
Photon-assisted tunneling (PAT) is an attractive process for the study of light-matter interaction phenomena. In PAT, the electron tunneling through a quantum dot is enabled via the quantum absorption of an electromagnetic wave. The observation of PAT under THz illumination have been limited to semiconductor superlattices [1] , resonant tunneling diodes [2] and more recently carbon nanotube quantum dots [3] . Graphene quantum dots (GQD) of typical size 100 nm size have great potential for PAT under THz illumination as their energy level splitting to quantum electron confinement falls in the THz range [4] , and room temperature bolometric detection of THz radiation have been demonstrated in GQD-based devices [5] .
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关键词
photon-assisted tunneling,PAT,light-matter interaction phenomena,electron tunneling,quantum absorption,THz illumination,resonant tunneling,carbon nanotube quantum dots,graphene quantum dots,quantum electron confinement,THz radiation,hexagonal boron nitride encapsulated graphene quantum dot,electromagnetic wave,semiconductor superlattices,resonant tunneling diodes,bolometric detection,GQD-based devices,temperature 293.0 K to 298.0 K,size 100.0 nm,BN-C
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