THz photon-assisted tunneling in hBN encapsulated graphene quantum dot
2021 CONFERENCE ON LASERS AND ELECTRO-OPTICS EUROPE & EUROPEAN QUANTUM ELECTRONICS CONFERENCE (CLEO/EUROPE-EQEC)(2021)
摘要
Photon-assisted tunneling (PAT) is an attractive process for the study of light-matter interaction phenomena. In PAT, the electron tunneling through a quantum dot is enabled via the quantum absorption of an electromagnetic wave. The observation of PAT under THz illumination have been limited to semiconductor superlattices [1] , resonant tunneling diodes [2] and more recently carbon nanotube quantum dots [3] . Graphene quantum dots (GQD) of typical size 100 nm size have great potential for PAT under THz illumination as their energy level splitting to quantum electron confinement falls in the THz range [4] , and room temperature bolometric detection of THz radiation have been demonstrated in GQD-based devices [5] .
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关键词
photon-assisted tunneling,PAT,light-matter interaction phenomena,electron tunneling,quantum absorption,THz illumination,resonant tunneling,carbon nanotube quantum dots,graphene quantum dots,quantum electron confinement,THz radiation,hexagonal boron nitride encapsulated graphene quantum dot,electromagnetic wave,semiconductor superlattices,resonant tunneling diodes,bolometric detection,GQD-based devices,temperature 293.0 K to 298.0 K,size 100.0 nm,BN-C
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