High slope-efficiency quantum-dot lasers grown on planar exact silicon (001) with asymmetric waveguide structures

We report electrically pumped continuous-wave (CW) InAs/GaAs quantum dot lasers directly grown on planar exact silicon (001) with asymmetric waveguide structures. Surface hydrogen-annealing for the GaAs/ Si (001) templates and low-temperature growth tbr GaInP upper cladding layers were combined in the growth of the laser structure to achieve a high slope efficiency. For the broad-stripe edge-emitting lasers with 2-mm cavity length and 20-mu m stripe width made from the above laser structure, a threshold current density of 203.5 A/cm(2) and a single-facet slope efficiency of 0.158 W/A are achieved at similar to 1.31 mu m band under CW conditions. The extrapolated mean-time-to-failure reaches up to 21000 hours at room temperature, which is deduced from the data measured from C-mount packaged devices. Importantly, these results can provide a practical strategy to realize 1.3 mu m wavelength band distributed feedback lasers directly on planar exact Si (001) templates with thin buffer layers. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement