Schottky diode characteristics on high-growth rate LPCVD beta-Ga2O3 films on (010) and (001) Ga2O3 substrates

High crystalline quality thick beta-Ga2O3 drift layers are essential for multi-kV vertical power devices. Low-pressure chemical vapor deposition (LPCVD) is suitable for achieving high growth rates. This paper presents a systematic study of the Schottky barrier diodes fabricated on four different Si-doped homoepitaxial beta-Ga2O3 thin films grown on Sn-doped (010) and (001) beta-Ga2O3 substrates by LPCVD with a fast growth rate varying from 13 to 21 mu m/h. A higher temperature growth results in the highest reported growth rate to date. Room temperature current density-voltage data for different Schottky diodes are presented, and diode characteristics, such as ideality factor, barrier height, specific onresistance, and breakdown voltage are studied. Temperature dependence (25-250 degrees C) of the ideality factor, barrier height, and specific onresistance is also analyzed from the J - V- T characteristics of the fabricated Schottky diodes.