Screen-printed Ga2O3 thin film derived from liquid metal employed in highly sensitive pH and non-enzymatic glucose recognition

A new scaffold was introduced prefacing a screen-printed native gallium oxide (Ga2O3) layer derived from galinstan and pure metallic gallium, employed in Extended Gate Field Effect Transistor (EGFET) along with electrochemical measurement for pH and non-enzymatic glucose detection. Screen-printed Ga2O3 from galinstan exhibited a better pH sensitivity (79. 46 mV/pH) with 99% linearity and improved reliability compared to Ga2O3 derived from pure gallium. The highly selective Ga2O3 (from galistan) based glucose sensor exhibited high sensitivity (22.01 mV/mM) in EGFET and a minimum limit of detection (20 μM) in electrochemical measurement. The commercial applicability of the galinstan-based EGFET glucose sensor was examined by detecting glucose in human serum. Material characterization supported the electrical results. This approach is an innovative state-of-the-art for a stable, inexpensive, and reliable pH and glucose detection method at room temperature.