An Efficient 4H-SiC Photodiode for UV Sensing Applications

In this paper, we report experimental findings on a 4H-SiC-based p-i-n photodiode. The fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a nitrogen doped n-type layer. The dark reverse current density reaches 38.6 nA/cm(2) at -10 V, while the photocurrent density rises to 6.36 mu A/cm(2) at the same bias under lambda = 315 nm ultraviolet (UV) radiation with an incident optical power density of 29.83 mu W/cm(2). At the wavelength of lambda = 285 nm, the responsivity is maximum, 0.168 A/W at 0 V, and 0.204 A/W at -30 V, leading to an external quantum efficiency of 72.7 and 88.3%, respectively. Moreover, the long-term stability of the photodiode performances has been examined after exposing the device under test to several cycles of thermal stress, from 150 up to 350 & DEG;C and vice versa. The achieved results prove that the examined high-efficiency UV photodiode also has a stable responsivity if subjected to high temperature variations. The proposed device is fully compatible with the conventional production process of 4H-SiC components.