Design Considerations for 2D Dirac-Source FETs: Device Parameters, Non-Idealities and Benchmarking

Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for lowpower switching devices by leveraging the Dirac cone of graphene as a low-pass energy filter. In particular, using two-dimensional (2D) materials as the channel in a DS-FET is of interest for ultimate scaling purposes. In this paper, we investigate the design considerations for 2D DS-FETs using ballistic simulations based on Landauer formalism. We study the impact of several key device parameters on the device performance, such as graphene doping, Schottky barrier heights, and effective mass of the 2D channel. In addition, we study the impact of non-idealities on the performance of DS-FETs, such as graphene disorder and rethermalization, as well as ways to mitigate them. Finally, we benchmark the performance of DS-FETs for different channel materials, providing a guide for the proper choice of material for 2D DS-FETs.