A Simple Integratable Silicon Photodetector Covering the Short-Wave Infrared and Optical Communication Bands at 1.3 and 1.55 mu m

Silicon photodetectors and camera chips are ubiquitous in the visible region of the spectrum and the near-infrared. However, their large bandgap prevents their use at longer, technologically very important, wavelengths. The band-edge-modified rare-earth detectors in silicon demonstrated here, fabricated using standard silicon technology tools, offer a route to these wavelengths and room-temperature operation. Ion implantation of the usual n- and p-type dopants, arsenic and boron, into commercial silicon wafers is used to fabricate a standard silicon p-n junction. Further implants of the rare earths, either Ce or Yb, are made into the depletion region to enable the extended long-wavelength response. Detectivities up to 1.47x10(8)cm Hz(1/2)W(-1) and 2.89x10(7)cm Hz(1/2)W(-1) at 1.3 and 1.55 mu m have been obtained with these simple planar devices. If integrated as lateral detectors in a silicon photonics platform, responsivities as good as standard silicon photodetectors in the visible and near-infrared will be achievable.