Zinc oxide based 3-components semiconductor oxide photodiodes by dynamic spin coating method

In this study, the electrical attributes and exposed solar light impacts on the electrical properties were examined for the Al/p-Si structure having InGaZnO interlayer with different rates of Ga component. The films demonstrated the high transparency in the visible zone within percentages of 84–92%. The prepared films' optical bandgap values were utilized by the aid of optical data, and it is indicated that the bandgap values increased with Ga dopant increases. The electrical characteristics of the produced device and the effect of illumination intensity on these characteristics were investigated by the usage of current-voltage and transient measurements at different intensities of exposed light and the produced devices exhibited photoconducting behavior. In addition, electrical parameters with high importance level such as barrier height and ideality factor were calculated by the help of current-voltage measurements and their values were established at predictable level. The capacitance-voltage and conductance-voltage measurements of the produced device were made, and it was determined that they are depended on voltage and frequency, and also interface conditions and series resistance parameters having very large effects on electrical characteristics were calculated by the help of these measurements. It was determined that the energy band gap of the InGaZnO having different contents of Ga ingredient coincides with the energy levels of the semiconductor and the electrolyte. The analyzed results confirm that the fabricated Al/InGaZnO (with different rates of Ga)/p-Si/Al devices have high sensitivity to illumination applied and could be used in advancing optoelectronic applications, especially as a photodiode.