Cross-Sectional Investigation Of Multihigh-Energy Proton-Implanted Single Crystalline Diamond

Comprehending the implantation-related characteristic quantities of multihigh-energy proton irradiation of diamond is of significant technological interest for sensing applications, fabrication of 3D photonic crystals, and color centers (e.g., NV- center)-based quantum computing. Herein, proton-projected ranges and defect distributions in the (010) plane (Y-normal plane) of microwave plasma chemical vapor deposition (MPCVD)-grown diamond irradiated with 0.5-2.0 MeV proton (H+ or molecular H2+ ions) in a nonchanneling (near [001], Z-axis) direction, are experimentally measured via cross-sectional optical microscopy and high-resolution confocal Raman spectroscopy mapping. It is found that the projected ranges of the experimental findings and the simulation results indicate good consistencies, whereas there is considerable disagreement between them in regards to longitudinal straggling and lateral straggling. Based on the comparisons and analyses, a clear view of protons implanted in single crystalline diamond in the high-energy range theoretically and experimentally is obtained.