Van Der Waals Epitaxy And Remote Epitaxy Of Linbo3 Thin Films By Pulsed Laser Deposition

Nonlinear oxides such as LiNbO3 have found many applications in both conventional electro-optics and quantum optics. In this work, we demonstrate the van der Waals and remote epitaxy of LiNbO3 films on muscovite mica and graphene-buffered sapphire, respectively, by pulsed laser deposition. Structural analysis shows that the epitaxial relation in van der Waals epitaxy is LiNbO3 (0001) || mica (001) and LiNbO3 [01 (1) over bar 10] || mica [010] with LiNbO3 [10 (1) over bar 10] || mica [010], a 60 degrees-rotated twin structure. The relation in remote epitaxy is LiNbO3 (0001) || sapphire (0001) and LiNbO3 [01 (1) over bar 10] || sapphire [01 (1) over bar 10] with twin structure LiNbO3 [(1) over bar 1010] || sapphire [01 (1) over bar 10]. Furthermore, in remote epitaxy, Raman scattering analysis confirms the existence of graphene after deposition. Finally, we find that the oxygen partial pressure influences the presence of impurity phases significantly. The successful demonstration of van der Waals and remote epitaxy promises the feasibility of developing thin film LiNbO3 on demanded substrates toward scalable electro-optics. Published under an exclusive license by the AVS.