Application Of Scattering Parameters To Dpl Time-Lag Parameter Estimation At Nanoscale In Modern Integration Circuit Structures

This paper presents the methodology of material parameters' estimation for the dual-phase-lag (DPL) model at the nanoscale in modern integration circuit (IC) structures. The analyses and measurements performed were used in the unique dedicated micro-electro-mechanical system (MEMS) test structure. The electric and thermal domain of this structure was analysed. Finally, the silicon dioxide (SiO2) temperature time-lag estimation procedure is presented based on the scattering parameters measured by a vector network analyser for the considered MEMS structure together with the 2-omega method. The proposed methodology has the ability to estimate the time-lag parameter with high accuracy and is also suitable for the temperature time-lag estimation for other manufacturing process technologies of ICs and other insulation materials used for integrated circuits such as silicon nitride (Si3N4), titanium nitride (TiN), and hafnium dioxide (HfO2).