Copolymer-Based Flexible Resistive Random Access Memory Prepared By Initiated Chemical Vapor Deposition Process
ADVANCED ELECTRONIC MATERIALS(2021)
摘要
One of the essential components in this era of the Internet of Things (IoT) and wearable technologies, is a flexible and high performance resistive random access memory (ReRAM) device. In this paper, the authors propose a new copolymer-based ReRAM device that is realized using an initiated chemical vapor deposition (iCVD) process. The 7-nm-thick copolymer ReRAM device exhibits endurance properties as high as 10(5) and switching power as low as 438 mu W. The strong endurance of the copolymer-based ReRAM device originates from the properties of the robust poly-1,3,5-trivinyl-trimethyl-cyclotrisiloxane dielectric film, while its low on-current at the operating voltage is attributed to the properties of the poly-2-hydroxyethyl methacrylate dielectric with the Al electrode. The proposed ReRAM also has the additional advantage of forming-free switching characteristics.
更多查看译文
关键词
copolymers, initiated chemical vapor deposition, low power, resistive random access memory, soft electronics
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要