Realization low resistivity of high AlN mole fraction Si-doped AlGaN by suppressing the formation native vacancies

J. Yang,Y. H. Zhang,D. G. Zhao,P. Chen,Z. S. Liu,F. Liang

Journal of Crystal Growth（2021）

引用 7|浏览4

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摘要

•A very low value of resistivity of high Al content AlGaN is obtained.•Resistivity is strongly related to the PL emission intensity of about 500 nm.•Decreasing growth temperature of n-AlGaN is benefit for reducing its resistivity.

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关键词

A1. Defects,A1. Optical microscopy,A3. Metalorganic chemical vapor deposition,B1. Nitrides,B2. Semiconducting III-V materials

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