Impacts of core gate thickness and Ge content variation on the performance of Si 1− x Ge x source/drain Si–nanotube JLFET

In this paper, we investigate the impacts of variation in the core gate thickness and germanium content on the performance of a Si 1− x Ge x source/drain Si-nanotube junctionless field-effect transistor. A SiGe source/drain structure is combined with a core gate inside the nanotube to address and suppress the stringent issue of short-channel effects (SCEs). The effect of gate length, bias voltages, and Ge content on the subthreshold current, threshold voltage, and SCEs has also been studied by developing a compact analytical model including the quantum confinement effect. Our results highlight the utility of core gate and Si 1− x Ge x source/drain to provide an additional degree of freedom to control SCEs in the nanoscale regime.