3-D TCAD Methodology for Simulating Double-Hysteresis Filamentary I –V Behavior and Holding Current in ESD Protection SCRs
IEEE Transactions on Electron Devices(2021)
摘要
Current filament (CF)-related double-hysteresis I-V behavior and holding current, I
HOLD
,are analyzed using experiments and 3-D technology computer-aided design (TCAD) simulation in silicon-controlled rectifiers (SCR) for system-level electrostatic discharge (ESD) protection. Our 3-D TCAD methodology uses up and down quasi-dc current sweeps to reveal a memory effect in the current density distribution along the device width. I
HOLD
is related to the smallest possible CF where the self-sustaining SCR action takes place during down current sweep. I
HOLD
exhibits a nontrivial dependence on device width, depending on whether a CF is created or not. Analyzing devices of different layouts shows that I
HOLD
values determined from experiments and 3-D TCAD are almost layout-independent and substantially lower than those evaluated from 2-D TCAD. I
HOLD
calculated by 3-D TCAD in edge-terminated devices is higher than that in 3-D structures obtained from simple width-extended 2-D doping profiles. The use of latter devices, thus, simplifies the 3-D TCAD I- V analysis and provides a safe margin for I
HOLD
prediction. The work is relevant for designing the latch-up immunity of ESD protection devices, and it also shows that conventional 2-D TCAD can provide unwanted overestimation of I
HOLD
.
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关键词
3-D technology computer-aided design (TCAD) simulation,current filamentation,double-hysteresis I–V,electrostatic discharge (ESD) protection,emission microscopy (EMMI),holding current,latch-up immunity,silicon controlled rectifier (SCR),SCR triggering
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