Simulation Analysis To Optimize The Performance Of Homojunction P-I-N In0.7ga0.3n Solar Cell

Simulation analysis has been carried out to determine the perfect structural parameters of homojunction p-i-n In0.7Ga0.3N solar cell to obtain maximum overall efficiency. It has been demonstrated that n-layer of 16-nm, intrinsic layer (i-layer) of 0.5-mu m and p-layer of 3-jun thickness with specific doping concentrations of 1.10(20) cm(-3) for n-layer and 1.10(18) cm(-3) for p-layer allow us to achieve the maximum efficiency 29.21%. The solar cell structure provides an open circuit voltage of 1.0 V, short circuit current density of 33.15 mA/cm(2) and the percentage of fill factor value of 88.03%. However, the efficiency drops drastically, if the dislocation density in i-layer is higher than 1.10(14) cm(-3), and unintentional doping concentration within i-layer is beyond 1.5.10(16) cm(-3) of the structure.