Novel Cu/SiCN surface topography control for 1 μm pitch hybrid wafer-to-wafer bonding
2020 IEEE 70th Electronic Components and Technology Conference (ECTC)(2020)
摘要
This paper presents our approach to hybrid bond scaling to 1μm pitch and recent demonstration results. The direct wafer stacking of two Cu/SiCN surface is realized between slightly protruding Cu nano-pad on one wafer and slightly recessed, but larger, Cu nano-pad on the second wafer. The protruding nano-pad is tailored as smaller than the recessed nano-pad to compensate for the overlay tolerance in the wafer-to-wafer (W2W) bonding. To control the stability and performance of Cu nano-pad integration process, the intensive inline atomic force microscopy (AFM) and surface acoustic microscopy (SAM) characterization is used on various test structures before/after wafer bonding. The surface flatness should be less than 1 nm/μm to ensure void free bonding. This surface planarization is readily achieved for Cu pad densities up to 25%. Finally, we have demonstrated the high yield and low resistance performance across the 300mm wafer for hybrid bond pitches between 5 and 1μm.
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关键词
Component,Cu/SiCN,hybrid wafer bonding,wafer level stacking,Cu nano-pad,direct wafer stacking,CMP,AFM,SAM
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