Evolution Of Nanocrystalline Diamond Thin Films By High-Density Low-Pressure Ch4 Plasma In Planar Inductively Coupled Plasma Cvd

The prime objective of the present investigation is to enable growth of nanocrystalline diamond thin films at a moderate temperature and on inexpensive glass substrates without conventional pre-treatment by diamond powders. Using most familiar CH4 precursors diluted by Ar at remarkably low-pressure and high -density plasma triggered at 900 W of RE power in planar inductively coupled plasma (ICP) CVD, nanodiamond thin films were prepared at 450 degrees C, by optimizing the flow rate of the precursor gas at 30 m'forr pressure and, further by applying negative dc bias to the substrates. Excellent crystalline quality of the optimum nanodiamond thin film grown with 25 seem CH4 and -40 V of substrate bias was demonstrated by the well -identified <111> crystallographic planes in the TEM micrograph, supported by 50.28% C-C sp(3) component obtained from the XPS data and minimum of I-D/I-G similar to 0.357 and maximum of Ipialip similar to 1.780 in corresponding Raman spectrum.