Experimental And Modeling Study On The High-Performance P(++)-Gaas/N(++)-Gaas Tunnel Junctions With Silicon And Tellurium Co-Doped Ingaas Quantum Well Inserted

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p(++)-GaAs/n(++)-GaAs tunnel junctions and report a peak current density as high as 5839 A cm(-2) with a series resistance of 5.86 x 10(-5) omega cm(2). In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.