Residual Stresses Of Alsi10mg Fabricated By Selective Laser Melting (Slm)

The aim of the paper is the residual stress analysis of AlSi10Mg material fabricated by selective laser melting (SLM). The SLM technique allows to product of complex geometries based on three-dimensional model, in which stiffness and porosity can be precisely designed for specific uses. As the studied material, there were chosen solid samples built in two different directions: parallel (P-L) and perpendicular (P-R) to the tested surface and cellular lattice built in perpendicular direction, as well. In the paper, for the complex characterization of obtained materials, the phase analysis, residual stress and texture studies were performed. The classical non-destructive sin(2)psi method was used to measure the residual stress measurements.The final products, both solid sample and cellular lattice, have a homogeneous phase composition and consist of solid solution Al(Si) (Fm-3m) type, Si (Fd-3m) and Mg2Si (Pnma). The obtained values of the crystallite size are in a range of 1000 angstrom for Al(Si), 130-180 angstrom for Si phase. For Mg,Si phase, the crystallite sizes depend on sintering process, they are 800 angstrom for solid samples and 107 angstrom for cellular lattice. The residual stress results have the compressive character and they are in a range from -5 to -15 MPa.