Homojunction Perovskite Quantum Dot Solar Cells with over 1 mu m-Thick Photoactive Layer

The solution-processed solar cells based on colloidal quantum dots (QDs) reported so far generally suffer from poor thickness tolerance and it is difficult for them to be compatible with large-scale solution printing technology. However, the recently emerged perovskite QDs, with unique high defect tolerance, are particularly well-suited for efficient photovoltaics. Herein, efficient CsPbI3 perovskite QD solar cells are demonstrated first with over 1 mu m-thick active layer by developing an internal P/N homojunction. Specifically, an organic dopant 2,2'-(perfluoronaphthalene-2,6-diylidene) dimalononitrile (F6TCNNQ) is introduced into CsPbI3 QD arrays to prepare different carrier-type QD arrays. The detailed characterizations reveal successful charge-transfer doping of QDs and carrier-type transformation from n-type to p-type. Subsequently, the P/N homojunction perovskite QD solar cell is assembled using different carrier-type QDs, delivering an enhanced power conversion efficiency of 15.29%. Most importantly, this P/N homojunction strategy realizes remarkable thickness tolerance of QD solar cells, showing a record high efficiency of 12.28% for a 1.2 mu m-thick QD active-layer and demonstrating great potential for the future printing manufacturing of QDs solar cells.