Role of Low-Temperature Annealing in Modifying Silicon Carbide by Beams of Charged Particles

— The effect of low-temperature annealing on the capacity–voltage and current–voltage characteristics of silicon-carbide-based semiconductor devices irradiated with 0.9-MeV electrons and 25-MeV protons are studied. Commercial high-voltage (a blocking voltage of 1700 V) integrated 4H-SiC Schottky diodes are used. It is established for the first time that, for both types of irradiation used, not only well-known thermally stable Z1/Z2 and EH6/7 radiation defects compensating the electrical conductivity of n -SiC, but also a second group of radiation defects also creating deep levels in the forbidden band of the semiconductor, but annealed at relatively low (400°С) temperatures are introduced into n -SiC.