Signature Of Topological Nontrivial Band Structure In Ta3site6

The study of topology-protected electronic properties is a fascinating topic in present-day condensed-matter physics research. New topological materials are frequently being proposed and explored through various experimental techniques. Ta3SiTe6 is a newly predicted topological semimetal with fourfold degenerate nodal-line crossing in absence of spin-orbit coupling (SOC) and an hourglass Dirac loop, when SOC is included. Recent angle-resolved photoemission spectroscopy study in this material has also confirmed Dirac-like dispersions and two nodal lines near the Fermi energy, protected by nonsymmorphic glide mirror symmetry. In this work, we present the detailed magnetotransport properties of single-crystalline Ta3SiTe6. A nonsaturating magnetoresistance has been observed. Hall measurements reveal hole-type charge carriers with high carrier density and a moderate value of carrier mobility. Furthermore, we report a robust planar Hall effect, which persists up to high temperatures. These results validate the nontrivial nature of the electronic band structure.