10-nm Channel Length Indium-Tin-Oxide transistors with I on = 1860 μA/μm, G m = 1050 μS/μm at V ds = 1 V with BEOL Compatibility

In this paper, we successfully realized a shortest 10-nm channel length transistor based on ultrathin 3.5-nm indium tin oxide channel. Using 5-nm lanthanum-doped hafnium oxide (HfLaO) high- κ dielectric, the 10- nm channel ultrathin device architecture with wide bandgap exhibits excellent switching behavior with on/off ratio exceeding 1010 and ultra-low leakage current of 40 fA/μm. Record-high on-state current of 1860 μA/μm and transconductance (g m ) of more than 1000 μS/μm have been achieved, benefited from a rather small contact resistance of 162 Ω•μm. R on of the 10-nm ITO transistor was smaller than 500 Ω•μm. Adopting the MIT Virtual Source (MVS) model, we extracted the saturation injection velocity ν x0 up to 8.8 × 106 cm/s and the resulting mean free path λ mfp of ITO transistor is 21.6 nm. Radio frequency transistor with 30-nm-long channel exhibited record high radio-frequency (RF) performance with small-signal current gain (f T ) of 20 GHz and maximum oscillation frequency (f max ) of 13 GHz. These two metrics contribute to $\\sqrt {\\left( {{f_T} \\times {f_{\\max }}} \\right)} $ exceeding 15 GHz, confirming overwhelming superiority compared to RF transistors based on other ultrathin novel channel materials such as MoS 2 , BP and metal-oxides. Finally, we employed bootstrapped mode (BST) inverters to fabricate a 5-stage ring oscillator, and achieved the record-low propagation delay of 0.4 ns/stage among metal-oxides.