Effect Of Electron Injection On Minority Carrier Transport In 10 Mev Proton Irradiated Beta-Ga2o3 Schottky Rectifiers

We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence similar to 10(14) cm(-2)) Si-doped beta-Ga2O3 Schottky rectifiers. The diffusion length (L) of minority carriers is found to decrease with temperature from 330 nm at 21 degrees C to 289 nm at 120 degrees C, with an activation energy of similar to 26 meV. This energy corresponds to the presence of shallow Si trap-levels. Extended duration electron beam exposure enhances L from 330 nm to 726 nm at room temperature. The rate of increase for L is lower with increased temperature, with an activation energy of 43 meV. Finally, a brief comparison of the effect of electron injection on proton irradiated, alpha-particle irradiated and a reference Si-doped beta-Ga2O3 Schottky rectifiers is presented. (C) 2020 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited.