Variable Repetition Rate Thz Source For Ultrafast Scanning Tunneling Microscopy

Broadband THz pulses enable ultrafast electronic transport experiments on the nanoscale by coupling THz electric fields into the devices with antennas, asperities, or scanning probe tips. Here, we design a versatile THz source optimized for driving the highly resistive tunnel junction of a scanning tunneling microscope. The source uses optical rectification in lithium niobate to generate arbitrary THz pulse trains with freely adjustable repetition rates between 0.5 and 41 MHz. These induce subpico-second voltage transients in the tunnel junction with peak amplitudes between 0.1 and 12 V, achieving a conversion efficiency of 0.4 V/(kV/cm) from far-field THz peak electric field strength to peak junction voltage in the STM. Tunnel currents in the quantum limit of less than one electron per THz pulse are readily detected at multi-MHz repetition rates. The ability to tune between high pulse energy and high signal fidelity makes this THz source design effective for exploration of ultrafast and atomic-scale electron dynamics.