The Use of a Supersonic Jet of Gas Activated in a Microwave Discharge in Diamond Deposition

— The gas-jet method of the deposition of diamond-like structures using super-high-frequency (SHF) discharge for activating gases is considered. Direct statistical simulation is applied to analyze the gasdynamic processes occurring in the conditions of the gas-jet deposition of diamond structures. An activated gas flow in a nozzle is investigated and a considerable influence of the processes in the compressed layer formed near the substrate on the rate of synthesis of diamond structures is established. The regimes of flow of mixture components activated in the discharge chamber toward the substrate are determined and a considerable deceleration of heavy components in the compressed layer is found to exist. It is shown that with increase in the pressure in the deposition chamber from 10 to 80 Torr the crystal growth rate increases fourfold at the expense of an increase in the specific flux of the activated components toward the substrate.