An Improved Drain-Current Model for FinFETs

In this paper, an improved charge-based drain-current model for FinFETs is proposed. The proposed model takes into account the effect of large dynamic changes in temperature. Based on the classic Poisson's equation, an exact charge density expression is proposed by using the Lambert W function. Compared with previous studies, more temperature-dependent terms in the expression of charge density are considered, which can characterize the change in charge density from normal temperature to low temperature. To validate the model, a 4-Fin FinFET with 16-finger in 14nm process is fabricated and the drain-current data was measured over a range of temperatures (84K-295K). Comparing the calculation results with the measured data, the maximum RMS error of drain-current characters has reduced from 0.2623mA to 0.0301mA.