Enhancing Neutron Radiation Resistance Of Silicon-Based Semiconductor Devices Through Isotope Separation And Enrichment

Different isotopes may exhibit different resistance against the displacement damage induced by neutron radiations. To examine the difference in silicon isotopes, we calculate the damage functions of Si-28, Si-29, Si-30 and the natural silicon under intermediate neutron (10(-6)-0.1 MeV) and fast neutron (>0.1 MeV) radiations based on radiation damage theory and the Neutron Nuclear Reaction Evaluation Database (ENDF/B-VIII.0). Their accumulative displacement per atom (DPA) values under the neutron radiation of nuclear accident emergency response or cosmic space are also investigated. The calculated radiation damage functions and DPAs indicate that Si-30 endures at least 10-15% less displacement damage compared with Si-28, Si-29 and the natural silicon under intermediate and fast neutron radiations. Therefore, we propose to use Si-30-enriched silicon in semiconductor devices to enhance the neutron radiation resistance and extend the service life in radiative circumstances.