Rewritable High-Mobility Electrons In Oxide Heterostructure Of Layered Perovskite/Perovskite

Perovskite oxide SrTiO3 can be electron-doped and exhibits high mobility by introducing oxygen vacancies or dopants such as Nb or La. A reversible after-growth tuning of high mobility carriers in SrTiO3 is highly desired for the applications in high-speed electronic devices. Here, we report the observation of tunable high-mobility electrons in layered perovskite/perovskite (Sr(n+1)Ti(n)O3(n+1)/SrTiO3) heterostructure. By use of Srn+1TinO3n+1 as the oxygen diffusion barrier, the oxygen vacancy concentration near the interface can be reversibly engineered by high-temperature annealing or infrared laser heating. Because of the identical elemental compositions (Sr, Ti, and O) throughout the whole heterostructure, interfacial ionic intermixing is absent, giving rise to an extremely high mobility (exceeding 55000 cm(2) V-1 s(-1) at 2 K) in this type of oxide heterostructure. This layered perovskite/perovskite heterostructure provides a promising platform for reconfigurable high-speed electronic devices.