Finfet With Contact Over Active-Gate For 5g Ultra-Wideband Applications

FinFET with contact over active-gate (COAG) is implemented on 12nm node technology platform to optimize the Maximum Oscillation Frequency (F-MAX) and the Minimum Noise Figure (NFMIN) for devices with large fin numbers. This study shows that proposed COAG design can reduce the gate resistance of the 40-fin device by similar to 10-fold, while improving the F-MAX by similar to 180% with comparable reliability performance to traditional FinFETs. Excellent DC and RF performances with NFMIN of 0.6dB at 26GHz and 3dB improvement in NF with 50 Omega source impedance (NF50) over the 5-26GHz frequency range makes large fin number COAG FinFET an excellent candidate for variety of 5G sub-6GHz and mmWave applications in which high F-MAX and low noise are critical.