Fast Switching Of Stt-Mram To Realize High Speed Applications

T. Y. Lee,K. Yamane,J. Kwon,V. B. Naik,Y. Otani,D. Zeng,J. H. Lim, K. Sivabalan,C. Chiang,Y. Huang,S. H. Jang, L. Y. Hau,R. Chao, N. L. Chung, W. P. Neo, K. Khua,N. Thiyagarajah,T. Ling, L. C. Goh,J. Hwang,L. Zhang,R. Low, N. Balasankaran,F. Tan,J. Wong,C. S. Seet, J. W. Ting,S. Ong, Y. S. You, S. T. Woo,S. Y. Siah

2020 IEEE SYMPOSIUM ON VLSI TECHNOLOGY（2020）

引用 1|浏览5

暂无评分

摘要

We demonstrate less than 10 ns write speed and read access for 40Mb embedded MRAM (eMRAM) macro covering high temperature up to 125 degrees C. The macro shows un-powered data retention of 10 second at 125 degrees C and the capability of achieving 10(12) cycles endurance and 5 ns read time. Our study indicates that MTJ stack engineering and MTJ CD optimization are the two critical factors to achieve the suppression of bit error rate (BER) ballooning and 0.5x Ic scaling for fast switching.

查看译文

关键词

eMRAM, STT-MRAM, LLC, SRAM

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要