Laterally Coupled 2D MoS₂ Synaptic Transistor With Ion Gating

The dynamically active synaptic elements are the fundamental building blocks in neuromorphic systems towards artificial intelligence with computing and sensing capabilities. Here, a two-dimensional (2D) MoS ₂ synaptic transistor is fabricated by using poly(ethylene oxide) (PEO) and lithium perchlorate (LiClO ₄ ) as a laterally coupled ion-conducting electrolyte. Due to the strong electric double layer (EDL) effect, a low operating voltage of 1 V and a high current on/off ratio of 10 ⁵ have been obtained. In addition, short-term and long-term plasticity of typical synaptic behaviors have been successfully simulated, such as excitatory postsynaptic current, paired pulse facilitation long-term potentiation, long-term depression, and dynamic filtering. These results can provide new opportunities and strategies in building hybrid and low-dimensional neuromorphic systems for future artificial intelligence applications.