CMOS-integrated nanoscale memristive crossbars for CNN and optimization acceleration

2020 IEEE International Memory Workshop (IMW)(2020)

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摘要
While memristive crossbars have been reported to offer substantial performance efficiency benefits orders of magnitude above digital processors, there remain high risks in analog computing platforms using emerging non-volatile memory technologies, primarily due to device performance, variability, yield, and interactions with peripheral circuits. We directly integrated CMOS and nanoscale (down to 25 nm) memristors for fully on-chip reading/programming/computing demonstrations. We operate in a low power regime, program with fine control, showing high yield and low variability across our memristive arrays. With the integrated chip, we successfully demonstrated a multi-layer convolutional neural network with MNIST classification accuracy of above 95.3%, demonstrating several concepts in proposed architectures for hybrid analog-digital computing. The ability to tackle NP-hard optimization problems is also experimentally demonstrated with this platform. This work de-risks many of the chief concerns for an accelerator based on analog rather than purely digital computing circuits, as well as validating the core elements of a future in-memory computing architecture.
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关键词
memristor,non-volatile memory,in-memory computing,analog computing,neural networks
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