Calculation of full three-dimensional silicon detectors with stacking micrometer-sized pores for improving thermal neutrons detection

3D semiconductor detectors of thermal neutrons are facing difficulties on coating, filling and coating in its deep pores of hundred micrometers. This paper presents a way of stacking shallow pores of several micrometers to avoid the deep-pore technologies, as well as to improve thermal neutrons detection. The full 3D configurations of silicon detectors were achieved by stacking the shallow-pores layers. 6LiF and 10B converters were filled in the pores or interlayers of the multilayered pores-arrays. Detection efficiency and energy deposition spectra were calculated with Geant4 code. The results show the full 3D detectors are featured with higher detection efficiency and wider energy-deposition-spectra than the reported data. With 300 keV LLD, the maxima of the detection efficiencies are 88% and 60% for 6LiF and 10B, respectively, in the configurated parameters. And the energy deposition spectra of secondary particles in the detector are shifted from the low- to high-energy side by multilayering the shallow-pores-arrays on silicon.