Pressure-Induced Isostructural Electronic Topological Transitions In 2h-Mote2: X-Ray Diffraction And First-Principles Study

JOURNAL OF PHYSICS-CONDENSED MATTER(2021)

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摘要
Synchrotron x-ray diffraction measurements on powder 2H-MoTe2 (P6(3)/mmc) up to similar to 46 GPa have been performed along with first-principles based density functional theoretical analysis to probe the isostructural transition in low pressure regime and two electronic topological transitions (ETT) of Lifshitz-type in high pressure regime. The low pressure isostructural transition at similar to 7 GPa is associated with the lattice parameter ratio c/a anomaly and the change in the compressibility of individual layers. The pressure dependence of the volume by linearizing the Birch-Murnaghan equation of state as a function of Eulerian strain shows a clear change of the bulk modulus at the ETT pressure of similar to 20 GPa. The minimum of c/a ratio around 32 GPa is associated with the change in topology of electron pockets marked as second ETT of Lifshitz-type. We do not observe any structural transition up to the maximum applied pressure of similar to 46 GPa under quasi-hydrostatic condition.
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关键词
Lifshitz transition, electronic topological transition, transition metal dichalcogenide, high pressure, x-ray diffraction, density functional theory
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